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IRLHS6276TRPBF

IRLHS6276TRPBF

IRLHS6276TRPBF

Infineon Technologies

MOSFET 2N-CH 20V 4.5A PQFN

SOT-23

IRLHS6276TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VQFN
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 45MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 1.5W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number IRLHS6276PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 4.4 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 4.5V
Rise Time 9.3ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 4.9 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 3.4A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 800 mV
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.27221 $1.08884
8,000 $0.25544 $2.04352
12,000 $0.24705 $2.9646
28,000 $0.24248 $6.78944

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