SI4590DY-T1-GE3

new-10%

Manufacturer part number:SI4590DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N/P CHAN 100V SO8 DUAL

Case Package:SOT-23

Datasheet:SI4590DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	183mOhm
Terminal Finish	Matte Tin (Sn)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	R-PDSO-G8
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	2.4W 3.4W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	57m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	360pF @ 50V
Current - Continuous Drain (Id) @ 25°C	3.4A 2.8A
Gate Charge (Qg) (Max) @ Vgs	11.5nC @ 10V
Drain to Source Voltage (Vdss)	100V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID)	5.6A
DS Breakdown Voltage-Min	100V
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free