NVTJD4001NT1G

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Manufacturer part number:NVTJD4001NT1G

Manufacturer:ON Semiconductor

Description:NVTJD4001NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NVTJD4001NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 13 hours ago)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	272mW
Terminal Form	GULL WING
Pin Count	6
Reference Standard	AEC-Q101
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	17 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id	1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	33pF @ 5V
Gate Charge (Qg) (Max) @ Vgs	1.3nC @ 5V
Rise Time	23ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	82 ns
Turn-Off Delay Time	94 ns
Continuous Drain Current (ID)	250mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.25A
Drain-source On Resistance-Max	2.5Ohm
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Feedback Cap-Max (Crss)	12 pF
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free