SQJ940EP-T1_GE3

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Manufacturer part number:SQJ940EP-T1_GE3

Manufacturer:Vishay Siliconix

Description:Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs

Case Package:SOT-23

Datasheet:SQJ940EP-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Number of Pins	8
Transistor Element Material	SILICON
Manufacturer Package Identifier	PowerPAK SO-8L Dual Asymmetric
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Max Power Dissipation	43W
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G4
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	7.7 ns
Power - Max	48W 43W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	16m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	896pF @ 20V
Current - Continuous Drain (Id) @ 25°C	15A Ta 18A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 20V
Rise Time	9.5ns
Drain to Source Voltage (Vdss)	40V
Fall Time (Typ)	13.5 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	18A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	15A
Drain-source On Resistance-Max	0.016Ohm
Pulsed Drain Current-Max (IDM)	60A
DS Breakdown Voltage-Min	40V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free