IRF5305STRRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF5305STRRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Series
HEXFET®
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.8W Ta 110W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
60m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
31A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
31A
Drain-source On Resistance-Max
0.06Ohm
Pulsed Drain Current-Max (IDM)
110A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
280 mJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.11000
$1.11
500
$1.0989
$549.45
1000
$1.0878
$1087.8
1500
$1.0767
$1615.05
2000
$1.0656
$2131.2
2500
$1.0545
$2636.25
IRF5305STRRPBF Product Details
IRF5305STRRPBF Description
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. The D2Pak is a surface mount power package that can fit die up to HEX-4 in size. It has the highest power capabilities and the lowest on-resistance of any surface mount package currently available. Because of its low internal connection resistance, the D2Pak is appropriate for high current applications and can dissipate up to 2.01N in a typical surface mount application. For low-profile applications, the through-hole variant (IRF5305L) is offered.