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FDMS7660

FDMS7660

FDMS7660

ON Semiconductor

FDMS7660 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMS7660 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 2.8MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 78W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5565pF @ 15V
Current - Continuous Drain (Id) @ 25°C 25A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 25A
Threshold Voltage 1.9V
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.9 V
Height 1.05mm
Length 5mm
Width 6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.69943 $2.09829
6,000 $0.66639 $3.99834
15,000 $0.64279 $9.64185
FDMS7660 Product Details

FDMS7660 Description


This N-Channel MOSFET was created with the goal of increasing overall efficiency and reducing switch node ringing in DC/DC converters with synchronous or traditional switching PWM controllers. Low gate charge, low rDS(on), quick switching speed, and body diode reverse recovery performance have all been tuned.



FDMS7660 Features


  • Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A

  • Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A

  • Advanced Package and Silicon combination for low rDS(on) and high efficiency

  • Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications

  • MSL1 robust package design

  • 100% UIL tested

  • RoHS Compliant



FDMS7660 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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