FDMS7660 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDMS7660 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
68.1mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
2.8MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
R-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.5W Ta 78W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5565pF @ 15V
Current - Continuous Drain (Id) @ 25°C
25A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs
84nC @ 10V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
37 ns
Continuous Drain Current (ID)
25A
Threshold Voltage
1.9V
JEDEC-95 Code
MO-240AA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Nominal Vgs
1.9 V
Height
1.05mm
Length
5mm
Width
6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FDMS7660 Product Details
FDMS7660 Description
This N-Channel MOSFET was created with the goal of increasing overall efficiency and reducing switch node ringing in DC/DC converters with synchronous or traditional switching PWM controllers. Low gate charge, low rDS(on), quick switching speed, and body diode reverse recovery performance have all been tuned.
FDMS7660 Features
Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A
Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications