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IRLR7821TRRPBF

IRLR7821TRRPBF

IRLR7821TRRPBF

Infineon Technologies

MOSFET N-CH 30V 65A DPAK

SOT-23

IRLR7821TRRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 75W Tc
Element Configuration Single
Power Dissipation 75W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 15V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 4.3ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.2 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 65A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.03nF
Drain to Source Resistance 10mOhm
Rds On Max 10 mΩ
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
RoHS Status RoHS Compliant

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