NTD4810NH-35G

new-10%

Manufacturer part number:NTD4810NH-35G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 8.6A IPAK

Case Package:SOT-23

Datasheet:NTD4810NH-35G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	265
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.28W Ta 50W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	10m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1225pF @ 12V
Current - Continuous Drain (Id) @ 25°C	9A Ta 54A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 11.5V
Vgs (Max)	±20V
Continuous Drain Current (ID)	54A
Drain Current-Max (Abs) (ID)	10.8A
Drain-source On Resistance-Max	0.0167Ohm
Pulsed Drain Current-Max (IDM)	120A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	66 mJ
RoHS Status	RoHS Compliant