NP82N04NUG-S18-AY

new-10%

Manufacturer part number:NP82N04NUG-S18-AY

Manufacturer:Renesas Electronics America

Description:MOSFET N-CH 40V 82A TO-262

Case Package:SOT-23

Datasheet:NP82N04NUG-S18-AY Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tube
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta 143W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	39 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.2m Ω @ 41A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9750pF @ 25V
Current - Continuous Drain (Id) @ 25°C	82A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Rise Time	102ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	67 ns
Continuous Drain Current (ID)	82A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0042Ohm
DS Breakdown Voltage-Min	40V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant