IRF6608 Description

In order to achieve the lowest on-state resistance in a package with the footprint of a MICRO-8 and only a 0.7 mm profile, the IRF6608 blends the most recent HEXFET? Power MOSFET Silicon technology with the most modern DirectFETTM packaging. When application note AN-1035 detailing the manufacturing processes and methods is adhered to, the DirectFET package is compatible with current layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. The DirectFET package enables dual-sided cooling to increase thermal transfer in power systems, improving the best thermal resistance by 80% over the prior model. The IRF6608 minimizes switching and conduction losses by balancing low resistance, low charge, and ultra-low package inductance. This device is perfect for high-efficiency DC-DC converters that power the most recent generation of processors that operate at higher frequencies due to the decreased total losses. The IRF6608 has been designed for synchronous buck converter performance-critical parameters such as Rds(on), gate charge, and Cdv/dt-induced turn-on immunity. To reduce losses in the control FET socket, the IRF6608 has been improved for parameters like Rds(on) and gate charge that is crucial in synchronous buck converters.

IRF6608 Features

• Low Switching Losses

• Low Profile (<0.7 mm)

• Low Conduction Losses

• Application Specific MOSFETs

• Dual-Sided Cooling Compatible

• Ideal for CPU Core DC-DC Converters

• Compatible with existing Surface Mount Techniques

IRF6608 Applications

• Enterprise systems

• Personal electronics

• Communications equipment