IRLZ34NSPBF

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IRLZ34NSPBF

Manufacturer part number:IRLZ34NSPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 30A D2PAK

Case Package:SOT-23

Datasheet:IRLZ34NSPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	60mOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	30A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3.8W Ta 68W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	68W
Case Connection	DRAIN
Turn On Delay Time	8.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	880pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 5V
Rise Time	100ns
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
Fall Time (Typ)	29 ns
Turn-Off Delay Time	21 ns
Reverse Recovery Time	76 ns
Continuous Drain Current (ID)	30A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Nominal Vgs	2 V
Height	4.83mm
Length	10.67mm
Width	9.65mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free