PZTA42H6327XTSA1 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 30mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 6V to gain high efficiency.In this part, there is a transition frequency of 70MHz.A maximum collector current of 500mA volts can be achieved.

PZTA42H6327XTSA1 Features

the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz

PZTA42H6327XTSA1 Applications

There are a lot of Infineon Technologies PZTA42H6327XTSA1 applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting