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SGB07N120ATMA1

SGB07N120ATMA1

SGB07N120ATMA1

Infineon Technologies

SGB07N120ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SGB07N120ATMA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 125W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 16.5A
Turn On Time 56 ns
Test Condition 800V, 8A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 8A
Turn Off Time-Nom (toff) 520 ns
IGBT Type NPT
Gate Charge 70nC
Current - Collector Pulsed (Icm) 27A
Td (on/off) @ 25°C 27ns/440ns
Switching Energy 1mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.90865 $1.90865
SGB07N120ATMA1 Product Details

SGB07N120ATMA1 Description


SGB07N120ATMA1 is a single IGBT from the manufacturer Infineon Technologies with the Voltage - Collector Emitter Breakdown (Max) of 1200V. The operating temperature of the SGB07N120ATMA1 is -55°C~150°C TJ and its maximum power dissipation is 125W. SGB07N120ATMA1 has 2 pins and it is available in Tape & Reel (TR) packaging way. 



SGB07N120ATMA1 Features


  • lower Eoff compared to previous generation

  • Short circuit withstand time – 10 μs

  • NPT-Technology offers: very tight parameter distribution, high ruggedness, temperature stable behaviour, and parallel switching capability

  • Qualified according to JEDEC1 for target applications

  • Pb-free lead plating; RoHS compliant



SGB07N120ATMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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