STGW40V60DF Description

These devices are IGBTs developed using an advanced proprietary trench gate field stop structure. 

These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the

efficiency of very high-frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGW40V60DF Features

Maximum junction temperature: TJ = 175 °C

Tail-less switching off

VCE(sat) = 1.8 V (Typ.) @ IC = 40 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Very fast soft recovery antiparallel diode

STGW40V60DF Applications

Welding

Power factor correction

UPS

Solar inverters

Chargers