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SIGC08T60EX1SA1

SIGC08T60EX1SA1

SIGC08T60EX1SA1

Infineon Technologies

SIGC08T60EX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC08T60EX1SA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Published 2010
Series TrenchStop™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUUC-N2
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Dual Supply Voltage 600V
Current - Collector (Ic) (Max) 15A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 15A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 45A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
SIGC08T60EX1SA1 Product Details

SIGC08T60EX1SA1 Description


SIGC08T60EX1SA1 belongs to the family of TRENCHSTOP? IGBT3 chips provided by Infineon Technologies. It is designed based on 600V trench & field stop technology to realize low turn-out losses, short tail current, positive temperature coefficient, and easy paralleling. It combines the advantages of power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 



SIGC08T60EX1SA1 Features


Low turn-out losses

Short tail current

Positive temperature coefficient

Easy paralleling



SIGC08T60EX1SA1 Applications


Drives

White goods

Resonant applications


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