SIGC08T60EX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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SIGC08T60EX1SA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Published
2010
Series
TrenchStop™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUUC-N2
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Drain to Source Voltage (Vdss)
600V
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Dual Supply Voltage
600V
Current - Collector (Ic) (Max)
15A
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 15A
IGBT Type
Trench Field Stop
Current - Collector Pulsed (Icm)
45A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
SIGC08T60EX1SA1 Product Details
SIGC08T60EX1SA1 Description
SIGC08T60EX1SA1 belongs to the family of TRENCHSTOP? IGBT3 chips provided by Infineon Technologies. It is designed based on 600V trench & field stop technology to realize low turn-out losses, short tail current, positive temperature coefficient, and easy paralleling. It combines the advantages of power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.