IXDR30N120

new-10%

Manufacturer part number:IXDR30N120

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXDR30N120 IGBT Single Transistor, Isolated, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 Pins

Case Package:SOT-23

Datasheet:IXDR30N120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXD*30N120
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	200W
Case Connection	ISOLATED
Input Type	Standard
Turn On Delay Time	100 ns
Transistor Application	POWER CONTROL
Rise Time	70ns
Turn-Off Delay Time	500 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	50A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.4V
Turn On Time	170 ns
Test Condition	600V, 30A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 30A
Turn Off Time-Nom (toff)	570 ns
IGBT Type	NPT
Gate Charge	120nC
Current - Collector Pulsed (Icm)	60A
Switching Energy	4.6mJ (on), 3.4mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free