SIGC08T60EX7SA1 Description

This IGBT device was developed using a state-of-the-art, unique trench gate and field stop structure. It is a brand-new "HB" series IGBT, which denotes the most effective trade-off between conduction and switching losses for any frequency converter. Additionally, a small positive VCE(sat) temperature coefficient and a very narrow parameter distribution result in safer paralleling operation.

SIGC08T60EX7SA1 Features

• often utilized in applications for LDO (Linear), DDR

• adopts an interface IC for the BUS TERMINATOR SUPPORT CIRCUIT

SIGC08T60EX7SA1 Applications

Switching applications