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SIGC109T120R3LEX1SA2

  • SIGC109T120R3LEX1SA2
  • SIGC109T120R3LEX1SA2

SIGC109T120R3LEX1SA2

SIGC109T120R3LEX1SA2

Infineon Technologies

SIGC109T120R3LEX1SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

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SIGC109T120R3LEX1SA2 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case Die
Packaging Bulk
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 1.2kV
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Dual Supply Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 300A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $18.78000 $18.78
SIGC109T120R3LEX1SA2 Product Details

SIGC109T120R3LEX1SA2 Description


SIGC109T120R3LEX1SA2 belongs to the family of TRENCHSTOP? IGBT 3 chips provided by Infineon Technologies. It is designed based on 1200V trench & field stop technology to realize low turn-out losses, short tail current, positive temperature coefficient, and easy paralleling. It combines the advantages of power transistor (Giant Transistor-GTR) and power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 



SIGC109T120R3LEX1SA2 Features


Low turn-out losses

Short tail current

Positive temperature coefficient

Easy paralleling



SIGC109T120R3LEX1SA2 Applications


Drives


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