SIGC11T60SNCX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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SIGC11T60SNCX1SA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Published
2016
Pbfree Code
no
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
S-XUUC-N2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Drain to Source Voltage (Vdss)
600V
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Dual Supply Voltage
600V
Current - Collector (Ic) (Max)
10A
Turn On Time
40 ns
Test Condition
400V, 10A, 25 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 10A
Turn Off Time-Nom (toff)
224 ns
IGBT Type
NPT
Current - Collector Pulsed (Icm)
30A
Td (on/off) @ 25°C
28ns/198ns
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
SIGC11T60SNCX1SA1 Product Details
SIGC11T60SNCX1SA1 Description
SIGC11T60SNCX1SA1 belongs to the family of IGBT chips provided by Infineon Technologies. It is designed based on 600V NPT technology to realize a positive temperature coefficient, and easy paralleling. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.