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SIGC11T60SNCX1SA1

SIGC11T60SNCX1SA1

SIGC11T60SNCX1SA1

Infineon Technologies

SIGC11T60SNCX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC11T60SNCX1SA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2016
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code S-XUUC-N2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Dual Supply Voltage 600V
Current - Collector (Ic) (Max) 10A
Turn On Time 40 ns
Test Condition 400V, 10A, 25 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 10A
Turn Off Time-Nom (toff) 224 ns
IGBT Type NPT
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 28ns/198ns
RoHS Status ROHS3 Compliant
Lead Free Lead Free
SIGC11T60SNCX1SA1 Product Details

SIGC11T60SNCX1SA1 Description


SIGC11T60SNCX1SA1 belongs to the family of IGBT chips provided by Infineon Technologies. It is designed based on 600V NPT technology to realize a positive temperature coefficient, and easy paralleling. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 



SIGC11T60SNCX1SA1 Features


600V NPT technology

100μm chip

Positive temperature coefficient

Easy paralleling

Package: sawn on foil



SIGC11T60SNCX1SA1 Applications


Drives


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