SIGC12T60SNCX1SA4 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SIGC12T60SNCX1SA4 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-55°C~150°C TJ
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
10A
Test Condition
400V, 10A, 25Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 10A
IGBT Type
NPT
Current - Collector Pulsed (Icm)
30A
Td (on/off) @ 25°C
29ns/266ns
RoHS Status
ROHS3 Compliant
SIGC12T60SNCX1SA4 Product Details
SIGC12T60SNCX1SA4 Description
SIGC12T60SNCX1SA4 belongs to the family of IGBT chips provided by Infineon Technologies. It is designed based on 600V NPT technology to realize a positive temperature coefficient, and easy paralleling. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.