FIO50-12BD

new-10%

Manufacturer part number:FIO50-12BD

Manufacturer:IXYS

Description:IGBT 1200V 50A 200W I4PAC5

Case Package:SOT-23

Datasheet:FIO50-12BD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	i4-Pac™-5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	UL RECOGNIZED
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	5
JESD-30 Code	R-PSIP-T5
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	ISOLATED
Input Type	Standard
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.6V
Max Collector Current	50A
Reverse Recovery Time	150ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	135 ns
Test Condition	600V, 30A, 39 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 30A
Turn Off Time-Nom (toff)	490 ns
IGBT Type	NPT
Gate Charge	150nC
Switching Energy	4.6mJ (on), 2.2mJ (off)
RoHS Status	RoHS Compliant
Lead Free	Lead Free