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SIGC15T60EX1SA1

  • SIGC15T60EX1SA1
  • SIGC15T60EX1SA1

SIGC15T60EX1SA1

SIGC15T60EX1SA1

Infineon Technologies

SIGC15T60EX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC15T60EX1SA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Operating Temperature -40°C~175°C TJ
Published 2010
Series TrenchStop™
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 30A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 90A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
SIGC15T60EX1SA1 Product Details

SIGC15T60EX1SA1 Description


SIGC15T60EX1SA1 belongs to the family of TRENCHSTOP? IGBT3 chips provided by Infineon Technologies. It is designed based on 600V trench & field stop technology to realize low turn-out losses, short tail current, positive temperature coefficient, and easy paralleling. It combines the advantages of power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 



SIGC15T60EX1SA1 Features


Low turn-out losses

Short tail current

Positive temperature coefficient

Easy paralleling



SIGC15T60EX1SA1 Applications


Drives

White goods

Resonant applications


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