NGTD30T120F2SWK datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTD30T120F2SWK Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
Die
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
1200V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 40A
IGBT Type
Trench Field Stop
Current - Collector Pulsed (Icm)
200A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
79
$4.70873
$371.98967
NGTD30T120F2SWK Product Details
NGTD30T120F2SWK Description
NGTD30T120F2SWK is a 1200V IGBT Die. The transistor NGTD30T120F2SWK can be supplied in industrial motor drives, solar inverters, UPS systems, and welding applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).
NGTD30T120F2SWK Features
Extremely Efficient Trench with Field Stop Technology
Low VCE(sat) Loss Reduces System Power Dissipation