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IRG7PK42UD1-EPBF

IRG7PK42UD1-EPBF

IRG7PK42UD1-EPBF

Infineon Technologies

IRG7PK42UD1-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7PK42UD1-EPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
RoHS Status RoHS Compliant
IRG7PK42UD1-EPBF Product Details

IRG7PK42UD1-EPBF Description


IRG7PK42UD1-EPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 40 kHz in hard switching, >200 kHz in resonant mode. As a new IGBT,  it is able to offer the highest power density motor controls possible, tighter parameter distribution, and higher efficiency compared with previous generations. The IRG7PK42UD1-EPBF IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.



IRG7PK42UD1-EPBF Features


Extremely tight Vce(on) distribution

Tighter parameter distribution

Highest efficiencies available

Higher efficiency



IRG7PK42UD1-EPBF Applications


Industrial motor drive

Solar inverters

Welding 


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