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SIGC42T60NCX1SA3

SIGC42T60NCX1SA3

SIGC42T60NCX1SA3

Infineon Technologies

SIGC42T60NCX1SA3 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC42T60NCX1SA3 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -55°C~150°C
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 50A
Test Condition 300V, 50A, 3.3Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A
IGBT Type NPT
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 43ns/130ns
RoHS Status ROHS3 Compliant
SIGC42T60NCX1SA3 Product Details

SIGC42T60NCX1SA3 Description


SIGC42T60NCX1SA3 belongs to the family of insulated gate bipolar transistors provided by Infineon Technologies. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 



SIGC42T60NCX1SA3 Features


600V NPT technology

100μm chip

positive temperature coefficient

easy paralleling

Package: sawn on foil



SIGC42T60NCX1SA3 Applications


Drives


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