SIGC18T60NCX7SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SIGC18T60NCX7SA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-55°C~150°C TJ
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
20A
Test Condition
300V, 20A, 13Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 20A
IGBT Type
NPT
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
21ns/110ns
RoHS Status
ROHS3 Compliant
SIGC18T60NCX7SA1 Product Details
SIGC18T60NCX7SA1 Description
SIGC18T60NCX7SA1 belongs to the family of TRENCHSTOP? IGBT3 chips provided by Infineon Technologies. It is designed based on 600V trench & field stop technology to realize low turn-out losses, short tail current, positive temperature coefficient, and easy paralleling. It combines the advantages of power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.