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SIGC18T60NCX7SA1

SIGC18T60NCX7SA1

SIGC18T60NCX7SA1

Infineon Technologies

SIGC18T60NCX7SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC18T60NCX7SA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -55°C~150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 20A
Test Condition 300V, 20A, 13Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
IGBT Type NPT
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 21ns/110ns
RoHS Status ROHS3 Compliant
SIGC18T60NCX7SA1 Product Details

SIGC18T60NCX7SA1 Description


SIGC18T60NCX7SA1 belongs to the family of TRENCHSTOP? IGBT3 chips provided by Infineon Technologies. It is designed based on 600V trench & field stop technology to realize low turn-out losses, short tail current, positive temperature coefficient, and easy paralleling. It combines the advantages of power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 



SIGC18T60NCX7SA1 Features


Low turn-out losses

Short tail current

Positive temperature coefficient

Easy paralleling



SIGC18T60NCX7SA1 Applications


Drives

White goods

Resonant applications


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