IXGK64N60B3D1

new-10%

Manufacturer part number:IXGK64N60B3D1

Manufacturer:IXYS

Description:IGBT 600V 460W TO264

Case Package:SOT-23

Datasheet:IXGK64N60B3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	460W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	460W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	400A
Reverse Recovery Time	35 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	600V
Turn On Time	64 ns
Test Condition	480V, 50A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 50A
Turn Off Time-Nom (toff)	326 ns
IGBT Type	PT
Gate Charge	168nC
Td (on/off) @ 25°C	25ns/138ns
Switching Energy	1.5mJ (on), 1mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free