IRG4RC10K datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4RC10K Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2001
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
IRG4RC10K
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Power - Max
38W
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-252AA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
9A
Turn On Time
38 ns
Test Condition
480V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.62V @ 15V, 5A
Turn Off Time-Nom (toff)
417 ns
Gate Charge
19nC
Current - Collector Pulsed (Icm)
18A
Td (on/off) @ 25°C
11ns/51ns
Switching Energy
160μJ (on), 100μJ (off)
RoHS Status
Non-RoHS Compliant
IRG4RC10K Product Details
IRG4RC10K Description
A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power.
IRG4RC10K Features
·Short Circuit Rated UltraFast:Optimized for high operating frequencies>5.0 kHzand Short Circuit Rated to 10us @125°CVGE=15V
·Generation 4 1GBT design provides higher efficiency than Generation 3