SKB02N60E3266ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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SKB02N60E3266ATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Element Configuration
Single
Input Type
Standard
Power - Max
30W
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
6A
Reverse Recovery Time
130 ns
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
6A
Test Condition
400V, 2A, 118Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 2A
IGBT Type
NPT
Gate Charge
14nC
Current - Collector Pulsed (Icm)
12A
Td (on/off) @ 25°C
20ns/259ns
Switching Energy
64μJ
Radiation Hardening
No
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.60000
$0.6
500
$0.594
$297
1000
$0.588
$588
1500
$0.582
$873
2000
$0.576
$1152
2500
$0.57
$1425
SKB02N60E3266ATMA1 Product Details
SKB02N60E3266ATMA1 Description
SKB02N60E3266ATMA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SKB02N60E3266ATMA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SKB02N60E3266ATMA1 has the common source configuration.