STGW60H65DFB

new-10%

Manufacturer part number:STGW60H65DFB

Manufacturer:STMicroelectronics

Description:IGBT 650V 80A 375W TO-247

Case Package:SOT-23

Datasheet:STGW60H65DFB Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	375W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGW60
Element Configuration	Single
Input Type	Standard
Power - Max	375W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	80A
Reverse Recovery Time	60 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.6V
Test Condition	400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 60A
IGBT Type	Trench Field Stop
Gate Charge	306nC
Current - Collector Pulsed (Icm)	240A
Td (on/off) @ 25°C	51ns/160ns
Switching Energy	1.09mJ (on), 626μJ (off)
Gate-Emitter Voltage-Max	20V
Height	20.15mm
Length	15.75mm
Width	5.15mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free