SMBT 3904 B5003 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
SMBT 3904 B5003 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
MBT3904
Power - Max
330mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
300MHz
SMBT 3904 B5003 Product Details
SMBT 3904 B5003 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.This device displays a 40V maximum voltage - Collector Emitter Breakdown.
SMBT 3904 B5003 Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 300mV @ 5mA, 50mA
SMBT 3904 B5003 Applications
There are a lot of Infineon Technologies SMBT 3904 B5003 applications of single BJT transistors.