SPB80N04S2-H4

new-10%

Manufacturer part number:SPB80N04S2-H4

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 80A D2PAK

Case Package:SOT-23

Datasheet:SPB80N04S2-H4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	OptiMOS™
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	TIN LEAD
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	40V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Current Rating	80A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5890pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	148nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.004Ohm
Pulsed Drain Current-Max (IDM)	320A
Avalanche Energy Rating (Eas)	660 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead