STT7P2UH7

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Manufacturer part number:STT7P2UH7

Manufacturer:STMicroelectronics

Description:STT7P2UH7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STT7P2UH7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Weight	36.003894mg
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Series	STripFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	19.5mOhm
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STT7P
JESD-30 Code	R-PDSO-G6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.6W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	12.5 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22.5m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2390pF @ 16V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 4.5V
Rise Time	30.5ns
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	84.5 ns
Turn-Off Delay Time	128 ns
Continuous Drain Current (ID)	7A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	7A
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	28A
RoHS Status	ROHS3 Compliant