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FQPF6N90CT

FQPF6N90CT

FQPF6N90CT

ON Semiconductor

MOSFET N-CH 900V 6A TO-220F

SOT-23

FQPF6N90CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 56W Tc
Element Configuration Single
Power Dissipation 56W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 90ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 900V
RoHS Status RoHS Compliant

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