PMN28UN,135

new-10%

Manufacturer part number:PMN28UN,135

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 12V 5.7A 6TSOP

Case Package:SOT-23

Datasheet:PMN28UN,135 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Surface Mount	YES
Number of Pins	6
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.75
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1.75W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.75W
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	34m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	740pF @ 10V
Current - Continuous Drain (Id) @ 25°C	5.7A Tc
Gate Charge (Qg) (Max) @ Vgs	10.1nC @ 4.5V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	53 ns
Continuous Drain Current (ID)	5.7A
Threshold Voltage	700mV
Gate to Source Voltage (Vgs)	8V
Max Dual Supply Voltage	12V
Drain-source On Resistance-Max	0.04Ohm
Drain to Source Breakdown Voltage	12V
Height	1mm
Length	3.1mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free