IKP20N60T Description

Due to the combination of trench-cell and fieldstop concepts, hard-switching 600 V, 20 A TRENCHSTOPTM IGBT3 co-packed with full-rated free-wheeling diode in a TO220 package results in significant improvement of the static and dynamic performance of the device. The use of an IGBT in conjunction with a soft recovery emitter-controlled diode reduces turn-on losses even more. Due to the optimum compromise between switching and conduction losses, the highest efficiency is achieved.

IKP20N60T Features

• Low EMI

• Low Gate Charge

• Very low VCE(sat) 1.5V (Typ.)

• Short circuit withstand time 5μs

• Pb-free lead plating; RoHS compliant

• Maximum Junction Temperature 175°C

• Positive temperature coefficient in VCE(sat)

• Qualified according to JEDEC1 for target applications

• Very soft, fast recovery anti-parallel Emitter Controlled HE diode.

IKP20N60T Applications

• Welding

• Solar Inverters

• Air conditioning

• Industrial Drives

• Major Home Appliances

• Other hard switching applications

• Uninterruptible Power Supply (UPS)