IXSP10N60B2D1

new-10%

Manufacturer part number:IXSP10N60B2D1

Manufacturer:IXYS

Description:IGBT 600V 20A 100W TO220AB

Case Package:SOT-23

Datasheet:IXSP10N60B2D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	2.299997g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2005
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
Voltage - Rated DC	600V
Max Power Dissipation	100W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXS*10N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	100W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	30ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	20A
Reverse Recovery Time	25 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	60 ns
Test Condition	480V, 10A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 10A
Turn Off Time-Nom (toff)	530 ns
IGBT Type	PT
Gate Charge	17nC
Current - Collector Pulsed (Icm)	30A
Td (on/off) @ 25°C	30ns/180ns
Switching Energy	430μJ (off)
Height	9.15mm
Length	10.66mm
Width	4.82mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free