IRGP6660DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGP6660DPBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2006
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
330W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected]eak Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Input Type
Standard
Power - Max
330W
Collector Emitter Voltage (VCEO)
1.95V
Max Collector Current
95A
Reverse Recovery Time
70 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.65V
Test Condition
400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 48A
Gate Charge
95nC
Current - Collector Pulsed (Icm)
144A
Td (on/off) @ 25°C
60ns/155ns
Switching Energy
600μJ (on), 1.3mJ (off)
Height
20.7mm
Length
15.87mm
Width
5.31mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.940237
$5.940237
10
$5.603997
$56.03997
100
$5.286790
$528.679
500
$4.987537
$2493.7685
1000
$4.705224
$4705.224
IRGP6660DPBF Product Details
IRGP6660DPBF Description
The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.
IRGP6660DPBF Applications
? Welding
? H Bridge Converters
IRGP6660DPBF Features
Low VcEon)and switching losses
Optimized diode for full bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C