IPP200N25N3 G Description

The IPP200N25N3 G is an N-channel Power MOSFET produced based on OptiMOS? leading benchmark technology. The Infineon IPP200N25N3 G is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS), and inverters. The Operating and Storage Temperature Range is between -55 and 175??. And the MOSFET IPP200N25N3 G is in the TO-220-3 package with 300W power dissipation.

IPP200N25N3 G Features

• N-channel, normal level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• 175 ??C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1) for a target application

IPP200N25N3 G Applications

• Synchronous rectification for AC-DC SMPS

• Motor control for 48V¨C110V systems

• Isolated DC-DC converters

• Lighting for 110V AC networks

• HID lamps

• Class D audio amplifiers

• Uninterruptable power supplies (UPS)