IRF6811STR1PBF

new-10%

Manufacturer part number:IRF6811STR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N CH 25V 19A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6811STR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SQ
Number of Pins	6
Supplier Device Package	DIRECTFET™ SQ
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	3.7MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.1W Ta 32W Tc
Power Dissipation	2.1W
Turn On Delay Time	8.7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.7mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	2.1V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds	1590pF @ 13V
Current - Continuous Drain (Id) @ 25°C	19A Ta 74A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Rise Time	19ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	5.5 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	74A
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	25V
Input Capacitance	1.59nF
Drain to Source Resistance	5.4mOhm
Rds On Max	3.7 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free