R6515KNZC17

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Manufacturer part number:R6515KNZC17

Manufacturer:ROHM Semiconductor

Description:MOSFET (Metal Oxide) N-Channel 315m Ω @ 6.5A, 10V ±20V 1.05nF @ 25V 27.5nC @ 10V 650V TO-3P-3 Full Pack

Case Package:SOT-23

Datasheet:R6515KNZC17 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Operating Temperature	150°C TJ
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	60W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	315m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id	5V @ 430μA
Input Capacitance (Ciss) (Max) @ Vds	1.05nF @ 25V
Current - Continuous Drain (Id) @ 25°C	15A Tc
Gate Charge (Qg) (Max) @ Vgs	27.5nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$4.245564	$4.245564
10	$4.005248	$40.05248
100	$3.778537	$377.8537
500	$3.564657	$1782.3285
1000	$3.362884	$3362.884

R6515KNZC17 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.05nF @ 25V.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.