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JANTXV2N6800U

JANTXV2N6800U

JANTXV2N6800U

Microsemi Corporation

MOSFET N-CH

SOT-23

JANTXV2N6800U Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 18-CLCC
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/557
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 15
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position QUAD
Reference Standard MIL-19500/557
JESD-30 Code R-CQCC-N15
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 800mW Ta 25W Tc
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 34.75nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 1.15Ohm
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 400V
Avalanche Energy Rating (Eas) 0.51 mJ
Radiation Hardening No
RoHS Status Non-RoHS Compliant

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