MMIX1X200N60B3

new-10%

Manufacturer part number:MMIX1X200N60B3

Manufacturer:IXYS

Description:IGBT Transistors SMPD IGBTs Power Device

Case Package:SOT-23

Datasheet:MMIX1X200N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	24-PowerSMD, 21 Leads
Number of Pins	24
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	625W
Element Configuration	Single
Input Type	Standard
Power - Max	625W
Collector Emitter Voltage (VCEO)	1.7V
Max Collector Current	223A
Collector Emitter Breakdown Voltage	600V
Test Condition	360V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 100A
IGBT Type	PT
Gate Charge	315nC
Current - Collector Pulsed (Icm)	1000A
Td (on/off) @ 25°C	48ns/160ns
Switching Energy	2.85mJ (on), 2.9mJ (off)
Height	5.7mm
Length	25.25mm
Width	23.25mm
RoHS Status	ROHS3 Compliant