IXGF32N170

new-10%

Manufacturer part number:IXGF32N170

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXGF32N170 IGBT Single Transistor, 44 A, 3.5 V, 200 W, 1.7 kV, ISOPLUS i4-PAC, 3 Pins

Case Package:SOT-23

Datasheet:IXGF32N170 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	i4-Pac™-5 (3 Leads)
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*32N170
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	200W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Collector Emitter Voltage (VCEO)	1.7kV
Max Collector Current	44A
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Collector Emitter Saturation Voltage	2.7V
Turn On Time	90 ns
Test Condition	1020V, 32A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 32A
Turn Off Time-Nom (toff)	920 ns
IGBT Type	NPT
Gate Charge	146nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	45ns/270ns
Switching Energy	10.6mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	500ns
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free