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IKA03N120H2XKSA1

IKA03N120H2XKSA1

IKA03N120H2XKSA1

Infineon Technologies

IKA03N120H2XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKA03N120H2XKSA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 29W
Reverse Recovery Time 52ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 8.2A
Test Condition 800V, 3A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Gate Charge 8.6nC
Current - Collector Pulsed (Icm) 9A
Td (on/off) @ 25°C 9.2ns/281ns
Switching Energy 290μJ
IKA03N120H2XKSA1 Product Details

IKA03N120H2XKSA1 Description


IKA03N120H2XKSA1 is a single IGBT from the manufacturer Infineon Technologies with a breakdown voltage of 1200V. The operating temperature of IKA03N120H2XKSA1 is -40°C~150°C TJ and its Current - Collector (Ic) (Max) is 8.2A. IKA03N120H2XKSA1 has 3 pins and it is available in Tube packaging way. The Voltage - Collector Emitter Breakdown (Max) of IKA03N120H2XKSA1 is 1200V.



IKA03N120H2XKSA1 Features


  • oss reduction in resonant circuits

  • temperature stable behavior

  • parallel switching capability

  • tight parameter distribution

  • Integrated anti-parallel diode



IKA03N120H2XKSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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