TIG111BF Description

TIG111BF is a 600v N-channel Non-Punch Through IGBT. The transistor TIG111BF can be applied in high-power high-speed switching applications, such as communication devices, power supplies, telecommunications, measuring equipment, and manufacturing facilities due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor TIG111BF is in the TO-220FI package with 25W power dissipation. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).

TIG111BF Features

Low-saturation voltage

U1trahigh speed switching

Enhancement type

Gate-to-Emitter Voltage: 30V

Storage Temperature: -55 to 150℃

TIG111BF Applications

Automotive 

Advanced driver assistance systems (ADAS) 

Communications equipment 

Datacom module 

Enterprise systems 

Datacenter & enterprise computing