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SGH15N60RUFDTU

SGH15N60RUFDTU

SGH15N60RUFDTU

ON Semiconductor

SGH15N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGH15N60RUFDTU Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 600V
Max Power Dissipation 160W
Current Rating 15A
Element Configuration Single
Power Dissipation 160W
Input Type Standard
Turn On Delay Time 17 ns
Turn-Off Delay Time 44 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 24A
Reverse Recovery Time 60ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Test Condition 300V, 15A, 13 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 15A
Gate Charge 42nC
Current - Collector Pulsed (Icm) 45A
Td (on/off) @ 25°C 17ns/44ns
Switching Energy 320μJ (on), 356μJ (off)
Height 19.9mm
Length 15.6mm
Width 4.8mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
SGH15N60RUFDTU Product Details

SGH15N60RUFDTU  Description

Fairchild's RUFD series of Insulated Gate Bipolar

Transistors (IGBTs) provide low conduction and switching

losses as well as short circuit ruggedness. The RUFD

series is designed for applications such as motor control,

uninterrupted power supplies (UPS) and general inverters

where short circuit ruggedness is a required feature.



SGH15N60RUFDTU  Features

Short circuit rated 10us @ TC = 100°C, VGE = 15V

High-speed switching

Low saturation voltage : VCE(sat) = 2.2 V @ IC = 15A

High input impedance

CO-PAK, IGBT with FRD: trr = 42ns (Typ.)



SGH15N60RUFDTU  Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.


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