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HGTG12N60B3

HGTG12N60B3

HGTG12N60B3

ON Semiconductor

HGTG12N60B3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

HGTG12N60B3 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number HGTG12N60
Input Type Standard
Power - Max 104W
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 27A
Test Condition 480V, 12A, 25Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Gate Charge 51nC
Current - Collector Pulsed (Icm) 110A
Td (on/off) @ 25°C 26ns/150ns
Switching Energy 150μJ (on), 250μJ (off)
HGTG12N60B3 Product Details

HGTG12N60B3 Description


HGTG12N60B3 is a type of N-channel IGBT belonging to the UFS series of MOS gated high voltage switching devices. It combines the high input impedance of MOSFETs and low on-state conduction loss of bipolar transistors. The HGTG12N60B3 IGBT is well suited for many high-voltage switching applications requiring moderate frequencies and low conduction losses, including AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors.



HGTG12N60B3 Features


Low on-state conduction loss

High input impedance

600V switching SOA capability

Available in the TO-247 package



HGTG12N60B3 Applications


AC and DC motor controls

Power supplies and drivers for solenoids

Relays

Contactors


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