HGTG12N60B3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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HGTG12N60B3 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
HGTG12N60
Input Type
Standard
Power - Max
104W
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
27A
Test Condition
480V, 12A, 25Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 12A
Gate Charge
51nC
Current - Collector Pulsed (Icm)
110A
Td (on/off) @ 25°C
26ns/150ns
Switching Energy
150μJ (on), 250μJ (off)
HGTG12N60B3 Product Details
HGTG12N60B3 Description
HGTG12N60B3 is a type of N-channel IGBT belonging to the UFS series of MOS gated high voltage switching devices. It combines the high input impedance of MOSFETs and low on-state conduction loss of bipolar transistors. The HGTG12N60B3 IGBT is well suited for many high-voltage switching applications requiring moderate frequencies and low conduction losses, including AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors.