IXCP01N90E

new-10%

Manufacturer part number:IXCP01N90E

Manufacturer:IXYS

Description:MOSFET N-CH 900V 0.25A TO-220

Case Package:SOT-23

Datasheet:IXCP01N90E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
JESD-609 Code	e0
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	40W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80 Ω @ 50mA, 10V
Vgs(th) (Max) @ Id	5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	133pF @ 25V
Current - Continuous Drain (Id) @ 25°C	250mA Tc
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	61 ns
Continuous Drain Current (ID)	250mA
JEDEC-95 Code	TO-220AB
Drain-source On Resistance-Max	0.08Ohm
Drain to Source Breakdown Voltage	900V
Pulsed Drain Current-Max (IDM)	175A
RoHS Status	RoHS Compliant