IXDH20N120

new-10%

Manufacturer part number:IXDH20N120

Manufacturer:IXYS

Description:IGBT 1200V 38A 200W TO247AD

Case Package:SOT-23

Datasheet:IXDH20N120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	LOW SATURATION VOLTAGE, LOW SWITCHING LOSSES
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXD*20N120
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	200W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	38A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.4V
Turn On Time	175 ns
Test Condition	600V, 20A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 20A
Turn Off Time-Nom (toff)	570 ns
IGBT Type	NPT
Gate Charge	70nC
Current - Collector Pulsed (Icm)	50A
Switching Energy	3.1mJ (on), 2.4mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free